Abstract
Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110) surfaces. X-ray photoelectron spectroscopy (XPS) was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED) and high-resolution electron-energy-loss spectroscopy (HREELS) were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric InAs(110)-(1×1) surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC. Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.
Keywords
Publication details
- DOI
- 10.24200/squjs.vol7iss2pp303-310
- Journal
- Sultan Qaboos University Journal for Science, 7(2), 303
- Publisher
- Sultan Qaboos University
- Open access
- Gold open access
- License
- CC BY 4.0
Cite this article
APA 7
Veal, T. D., McConville, C. F., & Al-Harthi, S. H. (2002). Surface Preparation of InAs (110) Using Atomic Hydrogen. Sultan Qaboos University Journal for Science, 7(2), 303. https://doi.org/10.24200/squjs.vol7iss2pp303-310
MLA 9
Veal, Tim D., et al. "Surface Preparation of InAs (110) Using Atomic Hydrogen." Sultan Qaboos University Journal for Science, vol. 7, no. 2, 2002, pp. 303. https://doi.org/10.24200/squjs.vol7iss2pp303-310.
Chicago (author–date)
Veal, Tim D., Chris F. McConville, and Salim Hamood Al-Harthi. 2002. "Surface Preparation of InAs (110) Using Atomic Hydrogen." Sultan Qaboos University Journal for Science 7 (2): 303. https://doi.org/10.24200/squjs.vol7iss2pp303-310.
Harvard
Veal, T. D., McConville, C. F. and Al-Harthi, S. H. (2002) 'Surface Preparation of InAs (110) Using Atomic Hydrogen', Sultan Qaboos University Journal for Science, 7(2), pp. 303. doi:10.24200/squjs.vol7iss2pp303-310.
Vancouver
Veal TD, McConville CF, Al-Harthi SH. Surface Preparation of InAs (110) Using Atomic Hydrogen. Sultan Qaboos University Journal for Science. 2002;7(2):303. doi:10.24200/squjs.vol7iss2pp303-310
IEEE
T. D. Veal, C. F. McConville, and S. H. Al-Harthi, "Surface Preparation of InAs (110) Using Atomic Hydrogen," Sultan Qaboos University Journal for Science, vol. 7, no. 2, pp. 303, 2002, doi: 10.24200/squjs.vol7iss2pp303-310.