الملخص
Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110) surfaces. X-ray photoelectron spectroscopy (XPS) was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED) and high-resolution electron-energy-loss spectroscopy (HREELS) were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric InAs(110)-(1×1) surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC. Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.
الكلمات المفتاحية
بيانات النشر
- المعرّف الرقمي
- 10.24200/squjs.vol7iss2pp303-310
- المجلة
- مجلة جامعة السلطان قابوس للعلوم, 7(2), 303
- الناشر
- جامعة السلطان قابوس
- وصول مفتوح
- وصول مفتوح ذهبي
- الترخيص
- CC BY 4.0
اقتبس هذه المقالة
APA 7
Veal, T. D., McConville, C. F., & Al-Harthi, S. H. (2002). Surface Preparation of InAs (110) Using Atomic Hydrogen. Sultan Qaboos University Journal for Science, 7(2), 303. https://doi.org/10.24200/squjs.vol7iss2pp303-310
MLA 9
Veal, Tim D., et al. "Surface Preparation of InAs (110) Using Atomic Hydrogen." Sultan Qaboos University Journal for Science, vol. 7, no. 2, 2002, pp. 303. https://doi.org/10.24200/squjs.vol7iss2pp303-310.
شيكاغو (المؤلف–التاريخ)
Veal, Tim D., Chris F. McConville, and Salim Hamood Al-Harthi. 2002. "Surface Preparation of InAs (110) Using Atomic Hydrogen." Sultan Qaboos University Journal for Science 7 (2): 303. https://doi.org/10.24200/squjs.vol7iss2pp303-310.
هارفارد
Veal, T. D., McConville, C. F. and Al-Harthi, S. H. (2002) 'Surface Preparation of InAs (110) Using Atomic Hydrogen', Sultan Qaboos University Journal for Science, 7(2), pp. 303. doi:10.24200/squjs.vol7iss2pp303-310.
فانكوفر
Veal TD, McConville CF, Al-Harthi SH. Surface Preparation of InAs (110) Using Atomic Hydrogen. Sultan Qaboos University Journal for Science. 2002;7(2):303. doi:10.24200/squjs.vol7iss2pp303-310
IEEE
T. D. Veal, C. F. McConville, and S. H. Al-Harthi, "Surface Preparation of InAs (110) Using Atomic Hydrogen," Sultan Qaboos University Journal for Science, vol. 7, no. 2, pp. 303, 2002, doi: 10.24200/squjs.vol7iss2pp303-310.