Abstract

Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN) resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate"). The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

Keywords

Publication details

DOI
10.24200/squjs.vol7iss1pp71-80
Journal
Sultan Qaboos University Journal for Science, 7(1), 71
Publisher
Sultan Qaboos University
Open access
Gold open access
License
CC BY 4.0

Cite this article

APA 7

Leduc, P., Magnon, D., & Guitton, F. (2002). Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme. Sultan Qaboos University Journal for Science, 7(1), 71. https://doi.org/10.24200/squjs.vol7iss1pp71-80

MLA 9

Leduc, P., et al. "Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme." Sultan Qaboos University Journal for Science, vol. 7, no. 1, 2002, pp. 71. https://doi.org/10.24200/squjs.vol7iss1pp71-80.

Chicago (author–date)

Leduc, P., Didier Magnon, and Fabrice Guitton. 2002. "Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme." Sultan Qaboos University Journal for Science 7 (1): 71. https://doi.org/10.24200/squjs.vol7iss1pp71-80.

Harvard

Leduc, P., Magnon, D. and Guitton, F. (2002) 'Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme', Sultan Qaboos University Journal for Science, 7(1), pp. 71. doi:10.24200/squjs.vol7iss1pp71-80.

Vancouver

Leduc P, Magnon D, Guitton F. Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme. Sultan Qaboos University Journal for Science. 2002;7(1):71. doi:10.24200/squjs.vol7iss1pp71-80

IEEE

P. Leduc, D. Magnon, and F. Guitton, "Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme," Sultan Qaboos University Journal for Science, vol. 7, no. 1, pp. 71, 2002, doi: 10.24200/squjs.vol7iss1pp71-80.